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| 2SD601A Elektronische Bauelemente NPN Plastic-Encapsulate Transistor RoHS Compliant Product A suffix of "-C" specifies halogen and lead free FEATURES Power dissipation PCM: 0.2 W (TAMB=25) Collector current ICM: 0.1 A Collector-base voltage V(BR)CBO: 60 V Operating and storage junction temperature range TJ,TSTG: -55 to +150 V 3 3 Collector 1 SOT-23 Dim A B C D G Min 2.800 1.200 0.890 0.370 1.780 0.013 0.085 0.450 0.890 2.100 0.450 Max 3.040 1.400 1.110 0.500 2.040 0.100 0.177 0.600 1.020 2.500 0.600 Base 2 Emitter A L K 2 H J J K C Top View 1 BS L S V G D H All Dimension in mm ELECTRICAL CHARACTERISTICS at TA = 25C PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Collector Cut-off Current Collector-Emitter Saturation Voltage DC Current Gain Transition Frequency Collector Output Capacitance TEST CONDITIONS IC = 10 A, IE = 0 IC = 2 mA, IB = 0 IE = 10 A, IC = 0 VCB = 20V, IE = 0 VEB = 10V, IC = 0 IC = 100mA, IB = 10mA VCE = 10 V, IC = 2 mA VCE = 2 V, IC = 100 mA VCE = 10V, IC = 2mA, f = 200MHz VCB = 10V, IE = 0, f = 1MHz SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEO VCE(sat) hFE(1) hFE(2) fT COB MIN. 60 50 7 160 90 - TYP. - MAX. 0.1 100 UNIT V V V A A V 150 3.5 0.3 460 - MHz pF CLASSIFICATION OF hFE(1) Rank Range Marking Q 160 - 260 ZQ R 210 - 340 ZR S 290 - 460 ZS 01-June-2005 Rev. A Page 1 of 1 |
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